According to Figure 11, strong ultraviolet (UV)

According to Figure 11, strong ultraviolet (UV) emission band located at approximately 389 nm (E g = 3.19 eV) for undoped as well as for all doped ZnO:Al NWs can be seen which agrees with the PL spectra reported in literature [9]. For the same substrate used

in [10], only strong peaks corresponding to UV emissions were observed, whereas in the present work besides the strong UV emission peak, multiple other low intensity peaks appear. The peaks correspond to the following wavelengths: 400 nm (E g = 3.1 eV), 420 nm (E g = 2.95 eV), 442 nm (E g = 2.81 eV), and 452 nm (E g = 2.74 eV). It is S63845 in vitro believed that the oxygen vacancies were located in the interfacial region of the ZnO NWs which have contributed to the emission of those peaks. Figure 11 PL spectra of the as-synthesized ZnO:Al nanowires on silicon substrate LY2606368 price showing intensity versus wavelength. The peaks appear nearly identical

in shape for all samples except that they differ in the intensity only. The intensity of the peaks increases and become sharper as the dopant concentration increase. For undoped, UV emission peaks are slightly broader whereas the peaks are narrower and sharper and of higher intensity for all doped samples and become sharper as the dopant concentrations increase. From here, we know that the optical properties of nanostructures also differ with the aspect ratio of the nanostructure in which we observe only UV emission for low aspect I-BET151 mw ratio and vice versa. The increase in peak intensity with the corresponding increase in dopant concentration

can be attributed to near band-edge emission from crystalline ZnO and recombination of free excitons. This is in good agreement with the findings reported in [11]. In addition to the UV emission, broad oxygen vacancy-related emission band centered at the following energy band gaps (E g = 3.1 eV), (E g = 2.95 eV), (E g = 2.81 eV), and (E g = 2.74 eV) can be observed for all doped ZnO:Al NRs as can be observed in Figure 12. The peaks correspond to a range between violets and blue (lower visible spectrum). These relatively weak near-band C59 edge emission and significant defect-related emission property of these nanowires are believed to be beneficial to their photocatalytic activity [6]. It is understood that surface oxygen deficiencies are electron capture centers, which can reduce the recombination rate of electrons and holes. The emissions in visible range is known to originate from the oxygen vacancies and Zn interstitials produced by the transition of excited optical centers from the deep to the valence level. The emission band at 420 nm is strongest in the 11.3% Al-doped ZnO that can be attributed to the high level of structural defects (oxygen vacancies and zinc interstitials and/or presence of Al ions replaced with Zn ions) in the ZnO lattice structure, which manifest as deep energy levels in the band gap [6].

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