Reflection spectrum of ITO shows
the minimum reflection of SCH 900776 0.4% at 523 nm while reflection spectrum of TiO2 shows the minimum reflection of 3.5% at 601 nm within the 400- to 1,000-nm range. It means the Si absorbance increased by approximately 25% and 23% for ITO and TiO2 films, respectively. The low reflectance enhances the absorption of the incident photons and hence increases the photo-generated current in Si solar cells. It reveals that the RT RF sputtering deposition of ITO and TiO2 films can be used as anti-reflective coatings (ARCs) for Si solar cells. Figure 6 Reflectance spectra for ITO and TiO 2 layers with the as-grown Si sample. Conclusions The work presents the structural and optical characteristics of ITO and TiO2 ARCs deposited on a (100) P-type monocrystalline Si substrate by a RF magnetron sputtering
at RT. X-ray diffraction proved the anatase TiO2 and polycrystalline ITO films structure. Residual selleck inhibitor compressive strain was confirmed from the Raman analysis of the ITO and TiO2 films which exhibited blue shifts in peaks at 518.81 and 519.52 cm-1 excitation wavelengths, respectively. FESEM micrographs showed that the granules of various scales are uniformly distributed in both ITO and TiO2 films. Reflectance measurements of ITO and TiO2 films showed 25% and 23% improvement in the absorbance of incident light as compared to the as-grown R406 Si. Low reflectivity value of 10% in the ITO film as compared to 12% of the TiO2 film is attributed to the high rms value. Our results reveal that the highly absorbent polycrystalline ITO and photoactive anatase TiO2 can be obtained by RF magnetron sputtering at room temperature. Both ITO and TiO2 films can be used as ARCs in the fabrication of silicon solar cells. Acknowledgement The authors acknowledge the Short Term Research
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